? semiconductor components industries, llc, 2014 may, 2014 ? rev. 0 1 publication order number: NDT02N60Z/d NDT02N60Z n-channel power mosfet 600 v, 8.0 features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? zener?protected ? these devices are pb-free, halogen free/bfr free and are rohs compliant absolute maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 600 v gate?to?source v oltage v gs 30 v continuous drain current r ja steady state, t c = 25 c i d 0.3 a continuous drain current r ja steady state, t c = 100 c i d 0.21 a power dissipation ? r ja steady state, t c = 25 c p d 2.0 w pulsed drain current i dm 5 a continuous source current (body diode) i s 2.2 a single pulse drain?to?source avalanche energy (i d = 1.4 a) eas 38 mj peak diode recovery (note 1) dv/dt 4.5 v/ns maximum temperature for soldering leads t l 260 c operating junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. i s < 2.2 a, di/dt 200 a/ s, v dd bv dss , t j = +150 c thermal resistance parameter symbol value unit junction?to?ambient steady state NDT02N60Z (note 2) NDT02N60Z (note 3) r ja 61 148 c/w 2. surface mounted on fr4 board using 1 sq. pad size (cu area = 1.127 sq. [2 oz] including traces) 3. surface?mounted on fr4 board using minimum recommended pad size (cu area = 0.026? sq. [2 oz]). http://onsemi.com v (br)dss r ds(on) max 600 v 8.0 @ 10 v marking diagram see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information a = assembly location y = year w = work week 2n60z = specific device code = pb?free package ayw 2n60z (note: microdot may be in either location) sot?223 case 318e style 3 1 2 3 4 2 drain 1 gate 3 source 4 drain n?channel g (1) d (2, 4) s (3)
NDT02N60Z http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs =0v, i d =1ma 600 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j reference to 25 c, i d = 1 ma 605 mv/ c drain?to?source leakage current i dss v ds = 600 v, v gs =0v t j =25 c 1 a t j = 125 c 50 gate?to?source leakage current i gss v gs = 20 v 10 a on characteristics (note 4) gate threshold voltage v gs(th) v ds =v gs , i d =50 a 3.0 3.9 4.5 v negative threshold temperature coef- ficient v gs(th) /t j reference to 25 c, i d = 50 a 10.2 mv/ c static drain-to-source on resistance r ds(on) v gs =10v, i d = 0.7 a 5.9 8.0 forward transconductance g fs v ds =15v, i d = 0.7 a 1.3 s dynamic characteristics input capacitance (note 5) c iss v ds =25v, v gs = 0 v, f = 1 mhz 170 pf output capacitance (note 5) c oss 22 reverse transfer capacitance (note 5) c rss 4.8 effective output capacitance, energy related (note 7) c o(er) v gs =0v, v ds = 0 to 480 v 7.8 effective output capacitance, time related (note 8) c o(tr) i d = constant, v gs =0v, v ds = 0 to 480 v 12.4 total gate charge (note 5) q g v ds = 300 v, i d = 1.6 a, v gs =10v 7.4 nc gate-to-source charge (note 5) q gs 1.8 gate-to-drain (?miller?) charge (note 5) q gd 3.8 plateau voltage v gp 6.4 v gate resistance r g 11.5 resistive switching characteristics (note 6) turn-on delay time t d(on) v dd = 300 v, i d = 1.6 a, v gs =10v, r g = 0 10 ns rise time t r 6 turn-off delay time t d(off) 14 fall time t f 8 source?drain diode characteristics diode forward voltage v sd i s = 1.6 a, v gs =0v t j =25 c 0.9 1.2 v t j = 100 c 0.8 reverse recovery time t rr v gs =0v, v dd = 30 v, i s = 1.6 a, d i /d t = 100 a/ s 230 ns charge time t a 50 discharge time t b 180 reverse recovery charge q rr 495 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse width 380 s, duty cycle 2%. 5. guaranteed by design. 6. switching characteristics are independent of operating junction temperatures. 7. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss 8. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss
NDT02N60Z http://onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 25 20 15 10 30 5 0 0 0.25 0.75 1.00 1.25 1.75 2.25 2.50 9 8 7 6 5 4 3 2 0 0.25 0.75 1.00 1.50 1.75 2.25 2.50 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) 9.5 9.0 8.5 8.0 7.0 6.5 6.0 5.5 5.5 6.0 6.5 7.0 8.0 8.5 9.5 10 2.5 2.0 1.5 1.0 0.5 0 5 6 7 8 9 10 figure 5. on?resistance variation with temperature figure 6. breakdown voltage variation with temperature t j , junction temperature ( c) t j , junction temperature ( c) 125 100 75 50 25 0 ?25 ?50 0.4 0.6 1.0 1.2 1.6 2.0 2.4 2.6 125 100 75 50 25 0 ?25 ?50 0.900 0.925 0.950 1.000 1.025 1.050 1.100 1.125 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , normalized drain?to? source resistance bv dss , normalized breakdown voltage 0.50 1.50 2.00 v gs = 10 v to 7.5 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v 10 0.50 1.25 2.00 v ds = 15 v t j = 150 c t j = ?55 c t j = 25 c t j = 25 c i d = 0.7 a 7.5 10 7.5 9.0 t j = 25 c v gs = 10 v r ds(on) , drain?to?source resistance ( ) v gs = 10 v i d = 0.7 a 150 0.8 1.4 1.8 2.2 150 0.975 1.075 i d = 1 ma
NDT02N60Z http://onsemi.com 4 typical characteristics figure 7. threshold voltage variation with temperature figure 8. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 125 100 75 50 25 0 ?25 ?50 0.65 0.70 0.80 0.85 0.95 1.00 1.10 1.15 600 300 400 200 100 0 1 10 100 1000 10,000 figure 9. capacitance variation figure 10. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 1000 100 10 1 0.1 1 10 100 1000 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 figure 11. resistive switching time variation vs. gate resistance figure 12. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 0.1 1 10 100 1.0 0.9 0.8 0.7 0.6 0.4 0.3 0.2 0.001 0.01 0.1 1 10 v gs(th) , normalized threshold voltage (v) i dss , leakage (na) c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) 150 0.75 0.90 1.05 i d = 50 a t j = 150 c t j = 125 c t j = 100 c 500 v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss v ds , drain?to?source voltage (v) 0 50 100 150 200 250 350 300 v ds = 300 v t j = 25 c i d = 1.6 a q t v gs v ds q gs q gd v gs = 10 v v dd = 300 v i d = 1.6 a t d(off) t d(on) t f t r 0.5 1.1 t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = ?55 c
NDT02N60Z http://onsemi.com 5 typical characteristics figure 13. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 100 figure 14. thermal impedance (junction?to?ambient) t, time (s) 1e+03 0.01 0.1 1 10 100 i d , drain current (a) r(t), effective transient thermal response ( c/w) 1e+02 1e+01 1e+00 1e?01 1e?02 1e?03 1e?04 1e?05 1e?06 single pulse 0.01 0.02 0.05 0.1 0.2 duty cycle = 0.5 r ja = steady state = 61 c/w v gs 30 v single pulse t c = 25 c r ds(on) limit thermal limit package limit dc 10 ms 1 ms 100 s 10 s ordering information device package shipping ? NDT02N60Zt1g sot?223 (pb?free, halogen free) 1000 / tape & reel NDT02N60Zt3g 4000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NDT02N60Z http://onsemi.com 6 package dimensions sot?223 (to?261) case 318e?04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NDT02N60Z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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